JPS626659B2 - - Google Patents

Info

Publication number
JPS626659B2
JPS626659B2 JP52021236A JP2123677A JPS626659B2 JP S626659 B2 JPS626659 B2 JP S626659B2 JP 52021236 A JP52021236 A JP 52021236A JP 2123677 A JP2123677 A JP 2123677A JP S626659 B2 JPS626659 B2 JP S626659B2
Authority
JP
Japan
Prior art keywords
type
transistor
diffusion layer
diode
output terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52021236A
Other languages
English (en)
Japanese (ja)
Other versions
JPS53105985A (en
Inventor
Misao Higuchi
Michitoku Kamatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2123677A priority Critical patent/JPS53105985A/ja
Publication of JPS53105985A publication Critical patent/JPS53105985A/ja
Publication of JPS626659B2 publication Critical patent/JPS626659B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP2123677A 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor Granted JPS53105985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2123677A JPS53105985A (en) 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2123677A JPS53105985A (en) 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS53105985A JPS53105985A (en) 1978-09-14
JPS626659B2 true JPS626659B2 (en]) 1987-02-12

Family

ID=12049397

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2123677A Granted JPS53105985A (en) 1977-02-28 1977-02-28 Conmplementary-type insulating gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS53105985A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2929869C2 (de) * 1979-07-24 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Monolithisch integrierte CMOS-Inverterschaltungsanordnung
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
JPS5663874A (en) * 1979-10-29 1981-05-30 Hitachi Metals Ltd Hard tool material
JPS61185962A (ja) * 1985-02-13 1986-08-19 Nec Corp 相補型ｍｏｓ集積回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5191681A (en]) * 1975-01-22 1976-08-11
JPS593103B2 (ja) * 1977-07-07 1984-01-23 三菱電機株式会社 不平衡負荷補正装置

Also Published As

Publication number Publication date
JPS53105985A (en) 1978-09-14

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